Publikace: A layered Ge2Sb2Te5 phase change material
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Zhang, Bo
Čičmancová, Veronika
Kupcik, Jaroslav
Šlang, Stanislav
Rodriguez Pereira, Jhonatan
Svoboda, Roman
Kutálek, Petr
Wágner, Tomáš
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Abstrakt
In this study, a universal Ge2Sb2Te5 phase change material was sputtered to obtain a layered structure. The crystalline phase of this material was prepared by annealing. SEM (scanning electron microscopy) and HRTEM (high-resolution transmission electron microscopy) images give confirmed that the sputtered Ge2Sb2Te5 thin film in crystalline phase has multiple layers. The layers can be exfoliated by acetone. The thicknesses of acetone-exfoliated crystalline and amorphous flakes are approx. 10–60 nm.
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change memory, crystallization, dynamics, model, paměti, krystalizace, dynamika, model