Sb2Se3 Thin-Film Growth by Solution Atomic Layer Deposition
Článekpeer-reviewedpublished Náhled není k dispozici
Datum publikování
2022
Vedoucí práce
Oponent
Název časopisu
Název svazku
Vydavatel
American Chemical Society
Abstrakt
We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb2Se3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb2Se3 thin films with high homogeneity over large-area (4 '') substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb2Se3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se2- precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid-solid interface between the precursors and the surface.
Rozsah stran
p. 9392–9401
ISSN
0897-4756
Trvalý odkaz na tento záznam
Projekt
Zdrojový dokument
Chemistry of Materials, volume 34, issue: 21
Vydavatelská verze
http://10.1021/acs.chemmater.2c01550
Přístup k e-verzi
open access
Název akce
ISBN
Studijní obor
Studijní program
Signatura tištěné verze
Umístění tištěné verze
Přístup k tištěné verzi
Klíčová slova
absorber, photovoltaics, ALD, povrch, fotovoltaika, tenký film
Endorsement
Review
item.page.supplemented
item.page.referenced
Creative Commons license
Except where otherwised noted, this item's license is described as open access