A layered Ge2Sb2Te5 phase change material

Zhang, Bo; Čičmancová, Veronika; Kupcik, Jaroslav; Šlang, Stanislav; Rodriguez Pereira, Jhonatan; Svoboda, Roman; Kutálek, Petr; Wágner, Tomáš

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A layered Ge2Sb2Te5 phase change material

Zhang, Bo; Čičmancová, Veronika; Kupcik, Jaroslav; Šlang, Stanislav; Rodriguez Pereira, Jhonatan; Svoboda, Roman; Kutálek, Petr; Wágner, Tomáš

10.1039/c9nr08745a

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URI: https://hdl.handle.net/10195/77359

Datum publikování: 2020

Typ dokumentu: article

Abstrakt:

In this study, a universal Ge2Sb2Te5 phase change material was sputtered to obtain a layered structure. The crystalline phase of this material was prepared by annealing. SEM (scanning electron microscopy) and HRTEM (high-resolution transmission electron microscopy) images give confirmed that the sputtered Ge2Sb2Te5 thin film in crystalline phase has multiple layers. The layers can be exfoliated by acetone. The thicknesses of acetone-exfoliated crystalline and amorphous flakes are approx. 10–60 nm.

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