Intrinsic defect states and electron spin resonance in the Ge-S bulk glasses

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dc.contributor.author Černošková, Eva
dc.date.accessioned 2021-02-22T12:30:55Z
dc.date.available 2021-02-22T12:30:55Z
dc.date.issued 1996
dc.identifier Univerzitní knihovna (studovna) cze
dc.identifier.issn 1211-5541
dc.identifier.uri https://hdl.handle.net/10195/76841
dc.description.abstract A review of electron paramagnetic resonance (ESR) of bulk glassy Ge-S system is presented. The long-range periodicity in amorphous materials and glasses is disturbed by the fluctuations of bond angles, bond lengths and by composition as well. In a limit case an increase of the bond lengths can break chemical bonds between atoms of glass and so-called dangling bonds are formed. These are singly occupied and thus paramagnetic if stabilized by lowering of Hubbard´s energy. The dangling bonds in chalcogenide glasses and their relation to the ESR spectra are still questionable. Dangling bonds however can interact with nearest atoms of glass and create another type of multiatomic defect centers which are still paramagnetic. This review can also help to solve the problem why in the whole class of chalcogenide glasses the so-called dark ESR signal is found in Ge-S glasses only. eng
dc.format p. 157-176
dc.language.iso en
dc.publisher Univerzita Pardubice cze
dc.relation.ispartof Scientific papers of the University of Pardubice. Series A, Faculty of Chemical technology. 2(1996) eng
dc.rights open access eng
dc.title Intrinsic defect states and electron spin resonance in the Ge-S bulk glasses eng
dc.type Article eng
dc.identifier.signature 47333-2
dc.peerreviewed yes eng
dc.publicationstatus published eng


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