Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

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dc.contributor.author Janicek, Petr
dc.contributor.author Putri, Maryane
dc.contributor.author Kim, Ki Hwan
dc.contributor.author Lee, Hye Ji
dc.contributor.author Bouska, Marek
dc.contributor.author Šlang, Stanislav
dc.contributor.author Lee, Hee Young
dc.date.accessioned 2021-01-27T05:39:06Z
dc.date.available 2021-01-27T05:39:06Z
dc.date.issued 2021
dc.identifier.issn 1996-1944
dc.identifier.uri https://hdl.handle.net/10195/76811
dc.description.abstract A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2–6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss– Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology. en
dc.language.iso en
dc.publisher MDPI AG (Multidisciplinary Digital Publishing Institute) en
dc.relation.ispartof Materials. 2021, vol. 14, issue 3 en
dc.rights open access (CC-BY) en
dc.rights.uri https://creativecommons.org/licenses/by/4.0/ *
dc.subject optical properties en
dc.subject spectroscopic ellipsometry en
dc.subject RF magnetron sputtering en
dc.subject indium zinc tin oxide en
dc.subject non-stoichiometric en
dc.title Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film en
dc.type Article en
dc.peerreviewed yes en
dc.publicationstatus published version en
dc.identifier.doi 10.3390/ma14030578
dc.relation.publisherversion https://www.mdpi.com/1996-1944/14/3/578

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