xmlui.ArtifactBrowser.SimpleSearch.filter.source:29th International Conference Radioelektronika, RADIOELEKTRONIKA 2019
xmlui.ArtifactBrowser.SimpleSearch.filter.event29th International Conference Radioelektronika, RADIOELEKTRONIKA 2019 (16.04.2019 - 18.04.2019, Pardubice)
Abstract:
In this paper the high-power amplifier CGHV31500F designed for the radar S-Band application is studied. The amplifier module is based on GaN HEMT encapsulated internally matched transistor, delivering more than 500 W in a pulse regime. Nonlinear model of this amplifier was developed and nonlinear distortion of a standard radar signal and of possible future QAM signals are predicted.