Nonlinear distortion in a microwave high power amplifier

Abstract

In this paper the high-power amplifier CGHV31500F designed for the radar S-Band application is studied. The amplifier module is based on GaN HEMT encapsulated internally matched transistor, delivering more than 500 W in a pulse regime. Nonlinear model of this amplifier was developed and nonlinear distortion of a standard radar signal and of possible future QAM signals are predicted.