Mass spectrometric investigation of amorphous Ga-Sb-Se thin films
ČlánekStatus neznámýpeer-reviewedpublished versionDatum publikování
2019
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Nature Publishing Group
Abstrakt
Amorphous chalcogenide thin films are widely studied due to their enhanced properties and extensive applications. Here, we have studied amorphous Ga-Sb-Se chalcogenide thin films prepared by magnetron co-sputtering, via laser ablation quadrupole ion trap time-of-flight mass spectrometry. Furthermore, the stoichiometry of the generated clusters was determined which gives information about individual species present in the plasma plume originating from the interaction of amorphous chalcogenides with high energy laser pulses. Seven different compositions of thin films (Ga content 7.6-31.7 at. %, Sb content 5.2-31.2 at. %, Se content 61.2-63.3 at. %) were studied and in each case about -50 different clusters were identified in positive and -20-30 clusters in negative ion mode. Finally, for selected binary and ternary clusters, their structure was calculated by using DFT optimization procedure.
Rozsah stran
"10213-1"-"10213-10"
ISSN
2045-2322
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Projekt
GA18-03823S/Pokročilé metody přípravy tenkých vrstev chalkogenidů a jejich modifikace
Zdrojový dokument
Scientific Reports, volume 9, issue: July
Vydavatelská verze
https://www.nature.com/articles/s41598-019-46767-8
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open access (CC BY 4.0)
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amorphous chalcogenides, thin films, magnetron sputtering, mass spectrometry, amorfní chalkogenidy, tenké vrstvy, magnetronové naprašování, hmotnostní spektrometrie
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Except where otherwised noted, this item's license is described as open access (CC BY 4.0)