Preparation and characterization of (Bi1-xSbx)2Se3 single crystals

Abstract

This review paper summarizes papers dealing with characterization of (Bi1-xSbx)2Se3 single crystals which have been produced at the Faculty of Chemical Technology, University of Pardubice. The single crystals of (Bi1-xSbx)2Se3, prepared by a modified Bridgman method, were characterized by means of the X-ray diffraction analysis, homogeneity assessment, and by measurements of the reflectance in the plasma resonance range, transmittance, electric conductivity , Hall constant RH(B//c), Seebeck coefficient alfa(T c) and by figure of merit Z. The model of point defects in single crystals (Bi1-xSbx)2Se3 is used for qualitetive explanation of the changes in physical properties induced by incorporation of Sb atoms into Bi2Se3.