Publikace: Determination of the energy band gap of Bi2Se3
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Martinez, G.
Piot, B. A.
Hakl, M.
Potemski, M.
Hor, Y. S.
Materna, A.
Strzelecka, S. G.
Hruban, A.
Caha, O.
Novak, J.
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Nature Publishing Group
Abstrakt
Despite intensive investigations of Bi2Se3 in past few years, the size and nature of the bulk energy band gap of this well-known 3D topological insulator still remain unclear. Here we report on a combined magneto-transport, photoluminescence and infrared transmission study of Bi2Se3, which unambiguously show that the energy band gap of this material is direct and reaches Eg = (220 +/- 5) meV at low temperatures.
Popis
Klíčová slova
topological-insulator, surface, topologické izolátory, povrch