Transition metal dichalcogenides exhibit unique properties, which make them interesting for fundamental studies and for applications in many devices. Here, we report on the anomalous electrical behavior during the amorphous-to-crystal phase transition of MoS2. While crystallization typically results in an increase in conductivity, the situation in MoS2 is opposite. Amorphous MoS2 shows a sheet resistance of 3.2 x 103 omega with the value remaining nearly constant until 200 degrees C, MoS2 samples annealed above 200 degrees C exhibit an unexpected two-step increase in sheet resistance. The first abrupt increase takes place after annealing at temperatures between 300 and 400 degrees C while the second increase occurs after heating to 700 degrees C with typical sheet resistance values of 1.2 x 105 and 8 x 106 omega after heating to 500 degrees C and 900 degrees C, respectively. Using a combination of X-ray photoelectron spectroscopy and X-ray diffraction studies and ab-initio modeling, we argue that the large electrical conductivity observed in amorphous MoS2 is associated with the existence of a large quantity of Mo-Mo homopolar bonds that exceed the percolation threshold. The dramatic increase in the sheet resistivity in the first step is accompanied by the formation of the Mo-S bonds upon the disassociation of homopolar Mo-Mo bonds for a further increase in the sheet resistance upon annealing temperatures of 700 degrees C that can be attributed to the grain boundary formation during crystallization of MoS2 into the 2H layered structure.