Crystallization behavior of (GeTe4)(x)(GaTe3)(100-x) glasses for far-infrared optics applications

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dc.contributor.author Svoboda, Roman cze
dc.contributor.author Brandová, Daniela cze
dc.date.accessioned 2020-03-19T12:29:45Z
dc.date.available 2020-03-19T12:29:45Z
dc.date.issued 2019 eng
dc.identifier.issn 0925-8388 eng
dc.identifier.uri https://hdl.handle.net/10195/74730
dc.description.abstract Differential scanning calorimetry (DSC), X-ray diffraction (XRD), infrared microscopy and Raman spectroscopy were used to study the crystallization behavior of the (GeTe4)(x)(GaTe3)(100-x) glasses for far-infrared optics. Two independent overlapping crystallization processes were found - the initial surface-located precipitation of hexagonal Te and Ga2Te5 phases, followed by formation of the rhombohedral GeTe phase. The initial precipitation process, and in particular the formation of the Ga2Te5 phase, was found to be catalyzed by presence of mechanically induced defects. Finely powdered materials with higher GaTe3 content also exhibited more pronounced separation of the two crystallization sub-processes. Glass stability of the prepared glasses was evaluated in terms of the Hruby criterion - the (GeTe4)(86)(GaTe3)(14) composition was found to be the most stable and most resilient to the negative crystallization-enhancing influence of structure defects. Pros and cons of the compositional evolution of the crystallization behavior (determined via full kinetic description of the involved crystallization subprocesses and kinetic prediction of the crystallization behavior) were discussed with regard to the ceramics and glass-ceramics applications. Glasses with low GaTe3 content appear to be most suitable for preparation of fully ceramic materials, whereas glasses with high GaTe3 content seem to be most suitable for the glass-ceramics applications. (C) 2018 Elsevier B.V. All rights reserved. eng
dc.format p. 564-571 eng
dc.language.iso eng eng
dc.publisher Elsevier Science SA eng
dc.relation.ispartof Journal of Alloys and Compounds, volume 770, issue: January eng
dc.rights open access (CC BY-NC-ND 4.0) cze
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/ *
dc.subject Ge-Ga-Te glasses eng
dc.subject Crystallization kinetics eng
dc.subject DSC eng
dc.subject XRD eng
dc.subject Glass-ceramics eng
dc.subject Ge-Ga-Te skla cze
dc.subject krystalizační kinetika cze
dc.subject DSC cze
dc.subject XRD cze
dc.subject sklokeramika cze
dc.title Crystallization behavior of (GeTe4)(x)(GaTe3)(100-x) glasses for far-infrared optics applications eng
dc.title.alternative Krystalizační chování (GeTe4)(x)(GaTe3)(100-x) skel for dalekou infračervenou oblast aplikací cze
dc.type article eng
dc.description.abstract-translated DSC, XRD, iR mikroskopie a Ramanova spektroskopie byly použity pro studium krystalizačního chování (GeTe4)(x)(GaTe3)(100-x) skel pro aplikace v oblasti dalekého infračerveného spektra. Byly nalezeny dva mezávislé krystalizační procesy, které se překrývaly a byly přiřazeny počáteční povrchové precipitaci fází Te a Ga2Te5, následované tvorbou GeTe fáze. cze
dc.peerreviewed yes eng
dc.publicationstatus postprint eng
dc.identifier.doi 10.1016/j.jallcom.2018.08.150 eng
dc.relation.publisherversion https://www.sciencedirect.com/science/article/pii/S0925838818330305?via%3Dihub eng
dc.identifier.wos 000449486300068 eng
dc.identifier.scopus 2-s2.0-85051929247
dc.identifier.obd 39882820 eng


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open access (CC BY-NC-ND 4.0) Kromě případů, kde je uvedeno jinak, licence tohoto záznamu je open access (CC BY-NC-ND 4.0)

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