Despite intensive investigations of Bi2Se3 in past few years, the size and nature of the bulk energy band gap of this well-known 3D topological insulator still remain unclear. Here we report on a combined magneto-transport, photoluminescence and infrared transmission study of Bi2Se3, which unambiguously show that the energy band gap of this material is direct and reaches Eg = (220 +/- 5) meV at low temperatures.