Organoselenium Precursors for Atomic Layer Deposition
ČlánekOtevřený přístuppeer-reviewedpublished versionDatum publikování
2021
Autoři
Charvot, Jaroslav
Zazpe, Raul
Macák, Jan
Bureš, Filip
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Vydavatel
American Chemical Society
Abstrakt
Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as H2Se and diethyl(di)selenide has recently been extended by bis trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(N,N-dimethyldithiocarbamate)-selenium. Their structural aspects, property tuning, fundamental properties, and preparations are discussed. It turned out that symmetric four- and six-membered cyclic silyl selenides possess well-balanced reactivity/stability, facile and cost-effective synthesis starting from inexpensive and readily available chlorosilanes, improved resistance toward air and moisture, easy handling, sufficient volatility, thermal resistance, and complete gas-to-solid phase exchange reaction with MoCl5, affording MoSe2 nanostructures. These properties make them the most promising Se precursor developed for atomic layer deposition so far.
Rozsah stran
p. 6554-6558
ISSN
2470-1343
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Zdrojový dokument
ACS Omega, volume 6, issue: 10
Vydavatelská verze
https://doi.org/10.1021/acsomega.1c00223
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open access
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organoselenium, precursors for atomic layer deposition, organoselenové prekurzory, depozice atomárních vrstev
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Except where otherwised noted, this item's license is described as open access