Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes

Kolář, Jakub; Macák, Jan M.; Terabe, Kazuya; Wágner, Tomáš

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Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes

Kolář, Jakub; Macák, Jan M.; Terabe, Kazuya; Wágner, Tomáš

10.1039/C3TC31969E

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URI: http://hdl.handle.net/10195/58358

Datum publikování: 2014

Typ dokumentu: Article

Zdrojový dokument: Journal of Materials Chemistry C. 2013, issue 2

ISSN: 2050-7526

Vydavatelská verze: http://pubs.rsc.org/en/Content/ArticleLanding/2014/TC/c3tc31969e#!divAbstract

Abstrakt:

An advanced approach for resistive switching memory cells based on porous anodic alumina (Al2O3) membranes is reported. The effective resistive switching resulting in 6 orders of magnitude difference in resistivity between “on” and “off” states of the cell is achieved by specific electronic and ionic interaction between Ag nanowires filled in the membrane and an ionic conductor (AgxAsS2) deposited on the membrane by thermal evaporation. This easy and robust approach can be exploited for deposition of other ionic conductors for novel types of memories.

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